| PART |
Description |
Maker |
| MRF7S21170H |
2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| LDC18897M20Q-361 |
880 MHz - 915 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.22 dB INSERTION LOSS-MAX
|
MURATA MANUFACTURING CO LTD
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 . 915 MHz
|
MACOM[Tyco Electronics]
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 - 915 MHz
|
M/A-COM Technology Solutions, Inc.
|
| DP52-0005-TR DP52-00051 |
Low Cost SMT Dual Band Diplexer, 824-960/1850-1990 MHz(AMPS/PCS), 880-960/1700-1900 MHz(GSM/DCS)
|
Tyco Electronics
|
| MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| SM02932-58LD |
290-320 MHz 200 Watt Avg. Power Amplifier
|
Stealth Microwave, Inc.
|
| MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S190 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
